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| HMC784MS8GE v00.0808 GaAs MMIC 10 WATT T/R SWITCH DC - 4 GHz Typical Applications The HMC784MS8GE is ideal for: * Cellular / 4G Infrastructure * WiMAX, WiBro & Fixed Wireless * Automotive Telematics * Mobile Radio * Test Equipment Features Input P1dB: +40 dBm @ Vdd = +8V High Third Order Intercept: +62 dBm Positive Control: +3 to +8 V Low Insertion Loss: 0.4 dB MSOP8G Package: 14.8 mm2 Functional Diagram General Description The HMC784MS8GE is a high power SPDT switch in an 8-lead MSOPG package for use in transmit-receive applications which require very low distortion at high input signal power levels. The device can control signals from DC to 4 GHz. The design provides exceptional intermodulation performance; > +60 dBm third order intercept at +5V bias. RF1 and RF2 are reflective shorts when "OFF". On-chip circuitry allows single positive supply operation from +3 Vdc to +8 Vdc at very low DC current with control inputs compatible with CMOS and most TTL logic families. 11 SWITCHES - SPDT - SMT Electrical Specifi cations, TA = +25 C, Vctl = 0/Vdd, Vdd = +5V (Unless Otherwise Stated), 50 Ohm System Parameter Frequency DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.0 GHz DC - 4.0 GHz DC - 4.0 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 3.0 GHz DC - 4.0 GHz Vdd = +3V Vdd = +5V Vdd = +8V Vdd = +3V Vdd = +5V Vdd = +8V 0.02 - 0.1 GHz 0.1 - 2.0 GHz 0.1 - 3.0 GHz 0.1 - 4.0 GHz 0.1 - 4.0 GHz 32 35 38 26 Min. Typ. 0.4 0.6 0.8 0.9 1.3 30 35 30 20 10 32 37 38 35 38 41 42 62 61 60 Max. 0.6 0.8 1.1 1.3 2.0 Units dB dB dB dB dB dB dB dB dB dB dBm dBm dBm dBm dBm dBm dBm dBm dBm dBm Insertion Loss Isolation Return Loss (On State) Input Power for 0.1dB Compression Input Power for 1dB Compression 0.1 - 4.0 GHz Input Third Order Intercept (Two-tone input power = +30 dBm each tone) Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) DC - 4.0 GHz 15 40 ns ns 11 - 224 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC784MS8GE v00.0808 GaAs MMIC 10 WATT T/R SWITCH DC - 4 GHz Insertion Loss vs. Temperature 0 Isolation 0 INSERTION LOSS (dB) -1 +25 C +85 C -40 C -10 ISOLATION (dB) RF1 RF2 -2 -20 -3 -30 -4 -40 -5 0 1 2 3 4 FREQUENCY (GHz) 5 6 -50 0 1 2 3 4 FREQUENCY (GHz) 5 6 Insertion Loss vs. Vdd 0 Isolation vs. Vdd 0 +3V +5V +8V 11 SWITCHES - SPDT - SMT 11 - 225 INSERTION LOSS (dB) -1 ISOLATION (dB) 5 6 -10 -2 +3V +5V +8V -20 -3 -30 -4 -40 -5 0 1 2 3 4 FREQUENCY (GHz) -50 0 1 2 3 4 FREQUENCY (GHz) 5 6 Return Loss 0 -10 RETURN LOSS (dB) -20 -30 -40 -50 -60 0 1 2 3 4 FREQUENCY (GHz) 5 6 INPUT RETURN LOSS OUTPUT RETURN LOSS RF1 to RF2 Isolation 0 -10 ISOLATION (dB) RF1 ON RF2 OFF RF1 OFF RF2 ON -20 -30 -40 -50 0 1 2 3 4 FREQUENCY (GHz) 5 6 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC784MS8GE v00.0808 GaAs MMIC 10 WATT T/R SWITCH DC - 4 GHz Input P1dB vs. Vdd 50 +3V +5V +8V Input P0.1dB vs. Vdd 50 +3V +5V +8V 45 P1dB (dBm) 45 P0.1dB (dBm) 40 40 35 35 30 30 25 0 1 2 FREQUENCY (GHz) 3 4 25 0 1 2 FREQUENCY (GHz) 3 4 11 SWITCHES - SPDT - SMT Input P1dB vs. Temperature @ Vdd = +5V 50 +25 C +85 C -40 C Input IP3 vs. Tone Power @ Vdd = +3V 70 45 P1dB (dBm) 60 IP3 (dBm) 40 50 35 40 +30 dBm +27 dBm +20 dBm 30 30 25 0 1 2 FREQUENCY (GHz) 3 4 20 0 1 2 FREQUENCY (GHz) 3 4 Input IP3 vs. Tone Power @ Vdd = +5V 70 Input IP3 vs. Tone Power @ Vdd = +8V 70 60 60 IP3 (dBm) IP3 (dBm) 50 +30 dBm +27 dBm +20 dBm 50 +30 dBm +27 dBm +20 dBm 40 40 30 30 20 0 1 2 FREQUENCY (GHz) 3 4 20 0 1 2 FREQUENCY (GHz) 3 4 11 - 226 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC784MS8GE v00.0808 GaAs MMIC 10 WATT T/R SWITCH DC - 4 GHz Input IP3 vs. Temperature 27 dBm Tones, Vdd = +3V 70 Input IP3 vs. Temperature 27 dBm Tones, Vdd = +5V 70 60 60 IP3 (dBm) IP3 (dBm) 50 50 +25 C +85 C -40 C 40 +25 C +85 C -40 C 40 30 30 20 0 1 2 FREQUENCY (GHz) 3 4 20 0 1 2 FREQUENCY (GHz) 3 4 Input IP3 vs. Temperature 27 dBm Tones, Vdd = +8V 70 Input P1dB vs. Vdd 50 11 SWITCHES - SPDT - SMT 11 - 227 60 P1dB (dBm) 45 IP3 (dBm) 50 40 40 +25 C +85 C -40 C 35 +3V +5V +8V 30 30 20 0 1 2 FREQUENCY (GHz) 3 4 25 0 0.05 0.1 0.15 0.2 0.25 FREQUENCY (GHz) Input P0.1dB vs. Vdd 50 +3V +5V +8V Input IP3 vs. Tone Power @ Vdd = +5V 70 45 P0.1dB (dBm) 60 40 IP3 (dBm) 50 +30 dBm +27 dBm +20 dBm 35 40 30 30 25 0 0.05 0.1 0.15 0.2 0.25 FREQUENCY (GHz) 20 0 0.05 0.1 0.15 0.2 0.25 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC784MS8GE v00.0808 GaAs MMIC 10 WATT T/R SWITCH DC - 4 GHz Bias Voltage & Current Vdd (V) +3 +5 +8 Typical Idd (A) 0.5 2 20 Low (0 to +0.2V) High (Vdd 0.2V) Control Voltages & Currents State Vdd = +3V (A) 0.5 0.1 Vdd = +5V (A) 2 0.1 Vdd = +8V (A) 20 0.1 Truth Table Control Input (Vctl) A High Low B Low High Signal Path State RFC to RF1 Off On RFC to RF2 On Off 11 SWITCHES - SPDT - SMT Absolute Maximum Ratings RF Input Power (Vdd = +8V, 50 Ohm source & load impedances) Supply Voltage Range (Vdd) (Vctl = 0V) Control Voltage Range (A & B) Channel Temperature Continuous Pdiss (T = 85 C) (derate 25 mW/C above 85 C) Thermal Resistance (Channel to ground paddle) Storage Temperature Operating Temperature ESD Rating +39 dBm (T = +85 C) -0.2 to +9V -0.2 to Vdd +0.5V 150 C 1.217 W 53.4 C/W -65 to +150 C -40 to +85 C Class 1A HBM ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Note: DC blocking capacitors are required at ports RFC, RF1 and RF2. Their value will determine the lowest transmission frequency. 11 - 228 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC784MS8GE v00.0808 GaAs MMIC 10 WATT T/R SWITCH DC - 4 GHz Outline Drawing 11 NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number HMC784MS8GE Package Body Material RoHS-compliant Low Stress Injection Molded Plastic Lead Finish 100% matte Sn MSL Rating MSL1 [2] Package Marking [1] H784 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 229 SWITCHES - SPDT - SMT HMC784MS8GE v00.0808 GaAs MMIC 10 WATT T/R SWITCH DC - 4 GHz Pin Descriptions Pin Number 1 Function A Description See truth table and control voltage table. Interface Schematic 2 B See truth table and control voltage table. 3, 5, 8 RFC, RF1, RF2 This pin is DC coupled and matched to 50 Ohms. Blocking capacitors are required. 4 Vdd Supply Voltage 6, 7 GND Package bottom must also be connected to PCB RF ground. 11 SWITCHES - SPDT - SMT Typical Application Circuit Notes: 1. Set logic gate and switch Vdd = +3V to +8V and use HCT series logic to provide a TTL driver interface. 2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of +3 to +8 Volts applied to the CMOS logic gates and to pin 4 of the RF switch. 3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency of operation. 4. Highest RF signal power capability is achieved with V set to +8V. The switch will operate properly (but at lower RF power capability) at bias voltages down to +3V. 11 - 230 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC784MS8GE v00.0808 GaAs MMIC 10 WATT T/R SWITCH DC - 4 GHz Evaluation Circuit Board 11 SWITCHES - SPDT - SMT 11 - 231 List of Materials for Evaluation PCB 104124 [1] Item J1 - J3 J4 - J7 C1 - C3 C4 R1 - R3 U1 PCB [2] Description PCB Mount SMA RF Connector DC Pin 100 pF capacitor, 0402 Pkg. 10 KpF capacitor, 0603 Pkg. 100 Ohm Resistor, 0402 Pkg. HMC784MS8GE T/R Switch 104122 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 ohm impedance and the package ground leads and package bottom should be connected directly to the ground plane similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com |
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